| PART |
Description |
Maker |
| MAX662A MAX662ACPA MAX662ACSA MAX662AEPA MAX662AES |
12V, 30mA Flash Memory Programming Supply
12V 30mA Flash Memory Programming Supply
12V / 30mA Flash Memory Programming Supply
Quadruple 2-Input Exclusive-OR Gates 14-CDIP -55 to 125
Decade Counter 14-CDIP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
Quadruple 2-Input Exclusive-OR Gates 14-CFP -55 to 125 SWITCHED CAPACITOR REGULATOR, 500 kHz SWITCHING FREQ-MAX, PDIP8
|
Maxim Integrated Produc...
Maixm
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| MX10E8050IA MX10E8050IAQC MX10E8050IPC MX10E8050IQ |
On-chip Flash program memory with in-system programming
|
MCNIX[Macronix International]
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MX10E8050IUC MX10E80501 |
On-chip Flash program memory with in-system programming 片上闪存程序存储器在系统编程
|
微控制器/微处理器
Macronix International Co., Ltd.
|
| AT89S2051/S4051-24PU AT89S2051/S4051-24SU AT89S405 |
8-bit Microcontroller with 2K/4K Bytes Flash
2K/4K Bytes of In-System Programmable (ISP) Flash Program Memory
|
ATMEL Corporation
|
| ATTINY28L_V ATTINY28L ATTINY28V |
2K Flash Program Memory, 128 Bytes SRAM ( 32bytes register file), Keyboard interrupt. Up to 1 MIPS throughput at 1 MHz. 1.8 Volt operation
2K Flash Program Memory, 128 Bytes SRAM ( 32bytes register file), Keyboard interrupt. Up to 4 MIPS throughput at 4 MHz
From old datasheet system
|
Atmel
|
| SX48BD SX52BD_PQ SX52BD SX48BD_TQ |
Configurable Communications Controllers with EE/Flash Program Memory, In-System Programming Capability, and On-Chip Debug
|
N.A.
ETC[ETC]
|
| ATTINY26 ATTINY26-16MC ATTINY26-16MI ATTINY26-16PC |
8-bit Microcontroller with 2K Bytes Flash
2K Flash Program Memory, 160 Bytes SRAM, 128 Bytes EEPROM, 11 Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 8 MIPS throughput at 8 MHz. 3-volt operation
2K Flash Program Memory, 128 Bytes SRAM, 128-Byte EEPROM, 11-Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 16 MIPS throughput at 16 MHz
75 1% 1/16W 0402
|
ATMEL[ATMEL Corporation]
Atmel Corp.
|
| AT25F512Y4-10YU-2.7 AT25F512N-10SU-2.7 AT25F51204 |
SPI Serial Memory 64K X 8 FLASH 2.7V PROM, PDSO8
SPI Serial Memory 64K X 8 FLASH 2.7V PROM, DSO8
Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation
Atmel, Corp.
|
| ATAM862X-TNSJ4 ATAM862X-TNQJ4 |
Microcontroller with UHF ASK/FSK transmitter. Program memory 4 kB flash. Data-EEPROM 2 x 512 bit. RF frequency range 433 MHz. x-hardware revision.
|
Atmel
|
